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MTB75N05HD
Preferred Device
Power MOSFET
75 Amps, 50 Volts
N ? Channel D 2 PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain ? to ? source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
? Avalanche Energy Specified
? Source ? to ? Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? I DSS and V DS(on) Specified at Elevated Temperature
http://onsemi.com
75 AMPERES
50 VOLTS
R DS(on) = 9.5 m Ω
N ? Channel
D
? Short Heatsink Tab Manufactured ? Not Sheared
? Specially Designed Leadframe for Maximum Power Dissipation
w These devices are available in Pb ? free package(s). Specifications herein
apply to both standard and Pb ? free devices. Please see our website at
www.onsemi.com for specific Pb ? free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
G
4
S
D 2 PAK
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
1
2
3
CASE 418B
STYLE 2
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M Ω )
Gate ? to ? Source Voltage ? Continuous
Drain Current ? Continuous
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 μ s)
Total Power Dissipation
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C
(minimum footprint, FR ? 4 board)
V DSS
V DGR
V GS
I D
I D
I DM
P D
50
50
± 20
75
65
225
125
1.0
2.5
Volts
Amps
Watts
W/ ° C
Watts
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB75N05HD
YWW
Operating and Storage Temperature
Range
T J , T stg
? 55 to
150
° C
1
Gate
2
Drain
3
Source
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 V, V GS = 10 V, Peak
I L = 75 A, L = 0.177 mH, R G = 25 Ω )
Thermal Resistance
? Junction to Case
? Junction to Ambient
? Junction to Ambient (minimum foot-
print, FR ? 4 board)
E AS
R θ JC
R θ JA
R θ JA
500
1.0
62.5
50
mJ
° C/W
MTB75N05HD = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device Package Shipping
MTB75N05HD D 2 PAK 50 Units/Rail
Maximum Temperature for Soldering
Purposes, 1/8 ″ from case for 10 s
T L
260
° C
MTB75N05HDT4
D 2 PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 7
1
Publication Order Number:
MTB75N05HD/D
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